? semiconductor components industries, llc, 2010 march, 2010 ? rev. 3 1 publication order number: mjw21195/d mjw21195 (pnp) mjw21196 (npn) silicon power transistors the mjw21195 and mjw21196 utilize perforated emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. features ? total harmonic distortion characterized ? high dc current gain ? h fe = 20 min @ i c = 8 adc ? excellent gain linearity ? high soa: 2.25 a, 80 v, 1 second ? pb ? free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 250 vdc collector ? base voltage v cbo 400 vdc emitter ? base voltage v ebo 5.0 vdc collector ? emitter voltage ? 1.5 v v cex 400 vdc collector current ? continuous collector current ? peak (note 1) i c 16 30 adc base current ? continuous i b 5.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.7 c/w thermal resistance, junction ? to ? ambient r ja 40 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 s, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mjw21195 to ? 247 30 units/rail 16 amperes complementary silicon power transistors 250 volts, 200 watts mjw21196 to ? 247 30 units/rail http://onsemi.com mjw21196g to ? 247 (pb ? free) 30 units/rail 30 units/rail mjw21195g to ? 247 (pb ? free) to ? 247 case 340l 2 1 3 marking diagram mjw2119x aywwg x = 5 or 6 a = assembly location y = year ww = work week g = pb ? free package 1 base 2 collector 3 emitter
mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 250 ? ? vdc collector cutoff current (v ce = 200 vdc, i b = 0) i ceo ? ? 100 adc emitter cutoff current (v ce = 5 vdc, i c = 0) i ebo ? ? 50 adc collector cutoff current (v ce = 250 vdc, v be(off) = 1.5 vdc) i cex ? ? 50 adc second breakdown second breakdown collector current with base forward biased (v ce = 50 vdc, t = 1 s (non ? repetitive) (v ce = 80 vdc, t = 1 s (non ? repetitive) i s/b 4.0 2.25 ? ? ? ? adc on characteristics dc current gain (i c = 8 adc, v ce = 5 vdc) (i c = 16 adc, i b = 5 adc) h fe 20 8 ? ? 80 ? base ? emitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) ? ? 2.0 vdc collector ? emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) (i c = 16 adc, i b = 3.2 adc) v ce(sat) ? ? ? ? 1.0 3 vdc dynamic characteristics total harmonic distortion at the output v rms = 28.3 v, f = 1 khz, p load = 100 w rms h fe unmatched (matched pair h fe = 50 @ 5 a/5 v) h fe matched t hd ? ? 0.8 0.08 ? ? % current gain bandwidth product (i c = 1 adc, v ce = 10 vdc, f test = 1 mhz) f t 4 ? ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? ? 500 pf
mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 3 typical characteristics i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product , current bandwidth product (mhz) t pnp mjw21195 npn mjw21196 i c , collector current (amps) 6.5 6.0 5.5 5.0 4.5 4.0 2.5 2.0 1.0 10 0.1 7.5 7.0 6.0 5.0 4.0 3.0 2.0 1.0 10 0.1 1.0 v ce = 10 v t j = 25 c f test = 1 mhz v ce = 10 v t j = 25 c f test = 1 mhz 3.5 3.0 6.5 5.5 4.5 3.5 2.5 1.5 f , current bandwidth product (mhz) t f v ce = 5 v v ce = 5 v figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c , collector current (amps) i c , collector current (amps) h fe , dc current gain h fe , dc current gain i c , collector current (amps) i c , collector current (amps) pnp mjw21195 npn mjw21196 h fe , dc current gain pnp mjw21195 npn mjw21196 1000 100 10 100 10 1.0 0.1 1000 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 1000 10 100 10 1.0 0.1 v ce = 20 v t j = 100 c 25 c -25 c v ce = 20 v t j = 100 c 25 c -25 c v ce = 5 v t j = 100 c 25 c -25 c v ce = 5 v t j = 100 c 25 c -25 c 100 100
mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 4 typical characteristics v ce , collector-emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector-emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp mjw21195 npn mjw21196 30 0 25 20 15 10 5.0 0 5.0 10 15 20 25 30 0 25 20 15 5.0 0 5.0 10 15 20 25 10 t j = 25 c i b = 0.5 a 1.0 a 1.5 a 2.0 a t j = 25 c i b = 0.5 a 1.0 a 1.5 a 2.0 a v be(on) , base-emitter voltage (volts) figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical base ? emitter voltage i c , collector current (amps) figure 12. typical base ? emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) pnp mjw21195 npn mjw21196 pnp mjw21195 npn mjw21196 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 1.4 100 10 1.0 0.1 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 10 1.0 0.1 1.0 0.1 10 100 10 1.0 0.1 1.0 0.1 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c v ce = 20 v v ce = 5 v t j = 25 c v ce = 20 v v ce = 5 v
mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 5 there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t j(pk) = 150 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. typical characteristics figure 13. active region safe operating area v ce , collector ? emitter voltage (volts) 100 1 10 100 1000 10 1 0.1 100 ms 10 ms 1 sec pnp mjw21195 npn mjw21196 i c , collector current (amps) figure 14. active region safe operating area v ce , collector ? emitter voltage (volts) 100 1 10 100 1000 10 1 0.1 100 ms 10 ms 1 sec i c , collector current (amps) figure 15. mjw21195 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 16. mjw21196 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 t j = 25 c f test = 1 mhz c ob c ib t j = 25 c f test = 1 mhz c ob c ib
mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 6 audio precision model one plus total harmonic distortion analyzer source amplifier 50 0.5 0.5 8.0 -50 v dut dut +50 v figure 17. typical total harmonic distortion figure 18. total harmonic distortion test circuit frequency (hz) t hd , total harmonic distortion (%) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100000 10000 1000 100 10
mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 7 package dimensions to ? 247 case 340l ? 02 issue e n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mjw21195/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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